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Instrument >> Instrument for Solar Cell >> Multiple Angle Laser Ellipsometer:PH-LE
                


       The multiple angle laser ellipsometer provides film thickness, refractive index and absorption index at the HeNe laser wavelength 632,8 nm with an extraordinary precision and accuracy. It can be utilized to characterize single films, multiple layer stacks and bulk materials.
 

Applications:
Microelectronics
Photovoltaic
 

Product's Feature:
High stability and accuracy
Laser wavelength 632.8 nm
Goniometer with angles of incidence set in 5o steps
Multiple angle measurements
Large material database
Fully integrated support of multiple angle measurements for more complex applications and absolute thickness
Fast and comfortable measurement at a selectable, application specific single angle of incidence
 

Technique Specification:

Precision of ψ, Δ at 90° (transmission) position: δ(ψ)=0.002°, δ(Δ)=0.002°
Long term stability: δ(ψ)=±0.1°, δ(Δ)=±0.1°
Precision of film thickness: 0.01nm  for 100 nm SiO2 on Si
Precision of refractive index: 0.0005  for 100 nm SiO2 on Si
 

Typical Customer:
American,Europe and Asia and so on.

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